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7C102 FR1007G H66T68 4733A ATA5760 BCW69 UPD8253 USCD052H
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  Datasheet File OCR Text:
 Chip Schottky Barrier Diodes
FM5820 THRU FM5822
Silicon epitaxial planer type
Formosa MS
SMC
0.276(7.0) 0.260(6.6) 0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.032(0.8) Typ. 0.040(1.0) Typ. 0.152(3.8) 0.144(3.6)
0.189(4.8) 0.173(4.4)
0.244(6.2) 0.228(5.8)
0.087(2.2) 0.071(1.8)
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AB Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.00585 ounce, 0.195 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 3.0 80 2.0 20 Rq JA CJ TSTG -55 55 300 +150
o
UNIT A A mA mA C/w pF
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR
C
SYMBOLS
MARKING CODE SK32 SK33 SK34
VRRM
*1
VRMS
*2
VR
*3
VF
*4
Operating temperature (oC)
*1 Repetitive peak reverse voltage *2 RMS voltage
(V) FM5820 FM5821 FM5822 20 30 40
(V) 14 21 28
(V) 20 30 40
(V) 0.475 0.500 0.525
-55 to +125
*3 Continuous reverse voltage *4 Maximum forward voltage
RATING AND CHARACTERISTIC CURVES (FM5820 THRU FM5822)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CHARACTERISTICS
3.0 2.5
50
INSTANTANEOUS FORWARD CURRENT,(A)
2.0 1.5 1.0 0.5
10 3.0 1.0
Tj=25 C Pulse Width 300us 1% Duty Cycle
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE ( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
100
0.1
80
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLT AGE,(V)
60
Tj=25 C 8.3ms Single Half Sine Wave JEDEC method
40
20
FIG.5 - TYPICAL REVERSE
0 1 5 10 50 100
CHARACTERISTICS 100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
700 600 500 400 300 200 100 0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
1.0
Tj=75 C
.1
Tj=25 C
.01
.05
.1
.5
1
5
10
50
100
.01 0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENTAGE RATED PEAK REVERSE VOL TAGE


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